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| BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD539 Series 45 W at 25C Case Temperature 5 A Continuous Collector Current Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BD540 Collector-base voltage (IE = 0) BD540A BD540B BD540C BD540 Collector-emitter voltage (IB = 0) (see Note 1) BD540A BD540B BD540C Emitter-base voltage Continuous collector current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150C case temperature at the rate of 0.36 W/C. 3. Derate linearly to 150C free air temperature at the rate of 16 mW/C. VEBO IC Ptot Ptot TA Tj Tstg TL VCEO V CBO SYMBOL VALUE -40 -60 -80 -100 -40 -60 -80 -100 -5 -5 45 2 -65 to +150 -65 to +150 -65 to +150 260 V A W W C C C C V V UNIT JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD540 V(BR)CEO IC = -30 mA (see Note 4) VCE = -40 V ICES Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = -60 V VCE = -80 V VCE = -100 V ICEO IEBO VCE = -30 V VCE = -60 V VEB = VCE = VCE = VCE = -5 V -4 V -4 V -4 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = -0.5 A IC = IC = IC = IC = IC = IC = -1 A -3 A - 1A -3 A - 5A -3 A (see Notes 4 and 5) f = 1 kHz f = 1 MHz 20 3 (see Notes 4 and 5) (see Notes 4 and 5) 40 30 12 -0.25 -0.8 -1.5 -1.25 V V IB = 0 BD540A BD540B BD540C BD540 BD540A BD540B BD540C BD540/540A BD540B/540C MIN -40 -60 -80 -100 -0.2 -0.2 -0.2 -0.2 -0.3 -0.3 -1 mA mA mA V TYP MAX UNIT hFE IB = -125 mA IB = -375 mA IB = VCE = -1 A -4 V V CE(sat) VBE hfe VCE = -10 V VCE = -10 V IC = -0.5 A IC = -0.5 A |hfe | NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 2.78 62.5 UNIT C/W C/W resistive-load-switching characteristics at 25C case temperature PARAMETER ton toff TEST CONDITIONS IC = -1 A VBE(off) = 4.3 V IB(on) = -0.1 A RL = 30 MIN IB(off) = 0.1 A tp = 20 s, dc 2% TYP 0.3 1 MAX UNIT s s Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 1000 VCE = -4 V tp = 300 s, duty cycle < 2% TCS632AH COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V -10 TCS632AB TC = 25C TC = 80C hFE - DC Current Gain -1*0 100 -0*1 IC = IC = IC = IC = -100 mA -300 mA -1 A -3 A -1*0 -10 -100 -1000 10 -0*01 -0*1 -1*0 -10 -0*01 -0*1 IC - Collector Current - A IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1 VCE = -4 V TC = 25C VBE - Base-Emitter Voltage - V -0*9 TCS632AC -0*8 -0*7 -0*6 -0*5 -0*01 -0*1 -1 -10 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -10 SAS632AE IC - Collector Current - A -1*0 -0*1 -0*01 -1*0 BD540 BD540A BD540B BD540C -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 50 Ptot - Maximum Power Dissipation - W TIS631AC 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5 |
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